Micron Technology sampled 256GB DDR5 RDIMM for server validation
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Micron Technology, Inc. sampled a 256GB DDR5 registered dual in-line memory module to support server ecosystem validation. The company said the module is built to deliver higher speed and power efficiency for AI-related workloads that require increased memory capacity.
Micron said the 256GB DDR5 RDIMM is built on its 1-gamma technology, with speeds up to 9,200 megatransfers per second. The company also cited a power comparison in which a single 256GB module can reduce operating power by more than 40% versus two 128GB modules.
The module uses advanced packaging techniques, including 3D stacking with multiple memory dies connected by through-silicon vias. Micron said these elements, combined with its 1-gamma DRAM, were intended to provide capacity, speed, and power efficiency.
Micron said it collaborated with ecosystem enablers to co-validate the 256GB 1-gamma DDR5 RDIMM across current and next-generation server platforms, aiming for broad platform compatibility and a path to production deployment for data center customers building AI and HPC infrastructure at scale.
“Capacity, bandwidth, and power are the defining drivers of AI efficiency. With our 256GB DDR5 RDIMM, Micron is enabling servers to deliver significantly higher performance,” said Raj Narasimhan, senior vice president and general manager of the Cloud Memory Business Unit at Micron. “Built on our 1-gamma DRAM using advanced 3DS and TSV packaging, this solution delivers industry-leading speed and power efficiency, helping data center architects scale AI infrastructure more efficiently.”
Press release, provided by Globe Newswire on behalf of Micron Technology Inc. Read the original.