Applied Materials, Inc. and Micron partner on next-generation AI memory

Applied Materials, Inc. and Micron Technology are working together to develop next-generation DRAM, High Bandwidth Memory (HBM) and NAND to increase the energy-efficient performance of Artificial Intelligence (AI) systems.

The collaboration combined Applied’s EPIC Center in Silicon Valley with Micron’s center in Boise, Idaho and aimed to bring advanced Research and Development (R&D) capabilities together to strengthen the semiconductor pipeline in the United States.

Teams focused on materials, process technologies and architectures for DRAM, HBM and NAND intended for AI applications, and they also worked on advanced packaging to enable high-bandwidth, low-power memory solutions for power-intensive AI workloads.

Joint R&D activities leveraged engineering teams across California and Idaho and linked Applied’s EPIC Center capabilities with Micron’s U.S.-based R&D and manufacturing hubs to shorten commercialization timelines and increase access to Applied’s R&D portfolio.

“Applied Materials and Micron have a long-standing partnership focused on driving higher performance and more energy-efficient advanced memory chips by pushing the boundaries of materials engineering and manufacturing innovation,” said Gary Dickerson, President and CEO of Applied Materials. “Memory and storage are essential enablers of AI, and sustained innovation in these technologies is critical to unlocking AI’s full potential,” said Sanjay Mehrotra, Chairman, President and CEO of Micron Technology.

The press release included forward-looking statements about Applied’s investment and growth strategies, plans for the EPIC Center, the development of new materials and technologies, and expectations for the collaboration.